فیلتر نتایج
نتایج 1 تا 10 از مجموع 13
Journal Paper
Design and Performance Analysis of Gate Overlap Dual Material Tunnel Field Effect Transistor
Authors: S. Buttol، B. Balaji
Year 1403
Publish place: International Journal of Engineering (IJE) Issue 9، Vol 37
Pages: 7 | Language: EnglishJournal Paper
Improved Performance Analysis and Design of Dual Metal Gate FinFET for Low Power Digital Applications
Authors: P. Padmaja، D. Vemana Chary، R. Erigela، G. Sirisha، S. K. ChayaDevi، M. C. Pedapudi، B. Balaji، S. Cheerala، V. Agarwal، Y. Gowthami
Year 1403
Publish place: International Journal of Engineering (IJE) Issue 6، Vol 37
Pages: 8 | Language: EnglishJournal Paper
Investigation and Analysis of Dual Metal Gate Overlap on Drain Side Tunneling Field Effect Transistor with Spacer in ۱۰nm Node
Authors: S. Howldar، B. Balaji، K. Srinivasa Rao
Year 1403
Publish place: International Journal of Engineering (IJE) Issue 5، Vol 37
Pages: 9 | Language: English
Journal Paper
Voltage Difference Technique in Junctionless Tunneling FET for Suppression of Ambipolar Conduction Controlling
Authors: Morteza Rahimian
Year 1402
Publish place: Journal of Optoelectronical Nanostructures Issue 4، Vol 8
Pages: 12 | Language: English
Journal Paper
Numerical optimization of threshold voltage and off-current of a nano-scale symmetric double gate MOSFET based on the genetic algorithm: Various strategies compatible with device applications
Authors: Yazdan Karimi Pashaki، Seyed Ali Sedigh Ziabari، Abdollah Eskandarian، Ali Rahnamaei
Year 1402
Publish place: International Journal of Nano Dimension Issue 1، Vol 14
Pages: 12 | Language: EnglishJournal Paper
Gate Oxide Thickness and Drain Current Variation of Dual Gate Tunnel Field Effect Transistor
Authors: S. Howldar، B. Balaji، K. Srinivasa Rao
Year 1403
Publish place: International Journal of Engineering (IJE) Issue 3، Vol 37
Pages: 9 | Language: English
Journal Paper
Simulation of the Process of LDMOS Transistor Manufacture and Optimizing it to Increase the Current of Work
Authors: Payman Bahrami، Mohammad Reza Shayesteh، Mohammad Eslami
Year 1396
Publish place: majlesi Journal of Electrical Engineering Issue 4، Vol 11
Pages: 7 | Language: English
Journal Paper
Design and Realization of a Junction-less TFET for Analog and Digital Applications Based on Strain Engineering
Authors: Fayzollah Khorramrouze، Seyed Ali Sedigh Ziabari، Ali Heydari
Year 1401
Publish place: Telecommunication devices Issue 2، Vol 11
Pages: 8 | Language: EnglishJournal Paper
Band bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate
Authors: Ali Naderi، Behrooz Abdi Tahne
Year 1396
Publish place: International Journal of Nano Dimension Issue 4، Vol 8
Pages: 10 | Language: English
Journal Paper
طراحی و تحلیل یک ترانزیستور اثرمیدانی تونلی بدون پیوند دو گیتی با ساختار گیت چند ماده ای
Authors: نگار بشیری، رضا حسینی
Year 1400
Publish place: Journal of Iranian Association of Electrical and Electronics Engineers Issue 4، Vol 18
Pages: 7 | Language: Persian
نتایج 1 تا 10 از مجموع 13